plastic medium-power silicon npn darlingtons . . . for use as output devices in complementary generalpurpose amplifier applications. ? high dc current gain e h fe = 750 (min) @ i c = 1.5 and 2.0 adc ? monolithic construction ? bd675, 675a, 677, 677a, 679, 679a, 681 are complementary with bd676, 676a, 678, 678a, 680, 680a, 682 ? bd 677, 677a, 679, 679a are equivalent to mje 800, 801, 802, 803 ??????????????????????? ??????????????????????? maximum ratings ????????? ? ??????? ? ????????? rating ???? ? ?? ? ???? symbo l ??? ? ? ? ??? bd675 bd675 a ??? ? ? ? ??? bd677 bd677 a ???? ? ?? ? ???? bd679 bd679 a ??? ? ? ? ??? bd68 1 ??? ? ? ? ??? unit ????????? ????????? collectoremitter voltage ???? ???? v ceo ??? ??? 45 ??? ??? 60 ???? ???? 80 ??? ??? 100 ??? ??? vdc ????????? ????????? collectorbase voltage ???? ???? v cb ??? ??? 45 ??? ??? 60 ???? ???? 80 ??? ??? 100 ??? ??? vdc ????????? ????????? emitterbase voltage ???? ???? v eb ?????????? ?????????? 5.0 ??? ??? vdc ????????? ????????? collector current ???? ???? i c ?????????? ?????????? 4.0 ??? ??? adc ????????? ????????? base current ???? ???? i b ?????????? ?????????? 0.1 ??? ??? adc ????????? ? ??????? ? ????????? total device dissipation @t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ?????????? ? ???????? ? ?????????? 40 0.32 ??? ? ? ? ??? watts w/ c ????????? ? ??????? ? ? ??????? ? ????????? operating and storage junction temperating range ???? ? ?? ? ? ?? ? ???? t j , t stg ?????????? ? ???????? ? ? ???????? ? ?????????? 55 to +150 ??? ? ? ? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ????????????? ????????????? characteristic ???? ???? symbol ?????? ?????? max ??? ??? unit ????????????? ????????????? thermal resistance, junction to case ???? ???? q jc ?????? ?????? 3.13 ??? ??? c/w 50 40 10 5.0 0 15 30 45 60 75 105 135 150 165 figure 1. power temperature derating t c , case temperature ( c) p d , power dissipation (watts) 120 90 45 20 15 30 25 35 preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev.10 1 publication order number: bd675/d bd675 bd675a bd677 bd677a bd679 bd679a bd681 4.0 ampere darlington power transistors npn silicon 60, 80, 100 volts 40 watts *on semiconductor preferred device case 7709 to225aa type * 3 2 1 style 1: pin 1. emitter 2. collector 3. base
bd675 bd675a bd677 bd677a bd679 bd679a bd681 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter breakdown voltage (1) bd675, 675a (i c = 50 madc, i b = 0) bd677, 677a bd679, 679a bd681 ????? ? ??? ? ? ??? ? ????? bv ceo ??? ? ? ? ? ? ? ??? 45 60 80 100 ???? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = half rated v ceo , i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 500 ??? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = rated bv ceo , i e = 0) (v cb = rated bv ceo , i e = 0, t c = 100'c) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.2 2.0 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 2.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? dc currert gain (1) (i c = 1.5 adc,v ce = 3.0 vdc) bd675, 677, 679, 681 (i c = 2.0 adc, v ce = 3.0 vdc) bd675a, 677a, 679a ????? ? ??? ? ????? h fe ??? ? ? ? ??? 750 750 ???? ? ?? ? ???? e e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (1) (i c = 1.5 adc, i b = 30 madc) bd677, 679, 681 (i c = 2.0 adc, i b = 40 madc) bd675a, 677a, 679a ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 2.5 2.8 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (1) (i c = 1.5 adc, v ce = 3.0 vdc) bd677, 679, 681 (i c = 2.0 adc, v ce = 3 0 vdc) bd675a, 677a, 679a ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e e ???? ? ?? ? ???? 2.5 2.5 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? small signal current gain (i c = 1.5 adc, v ce = 3.0 vdc, f = 1.0 mhz) ????? ????? h fe ??? ??? 1.0 ???? ???? e ??? ??? e (1) pulse test: pulse width 300 m s, duty cycle 2.0%. figure 2. dc safe operating area 5.0 1.0 v ce , collector-emitter voltage (volts) 2.0 1.0 0.5 0.05 2.0 5.0 10 50 10 0 bonding wire limit thermally limit at t c = 25 c secondary breakdown limit 0.2 0.1 i c , collector current (amp) t c = 25 c bd675, 675a bd677, 677a bd679, 679a bd681 20 there are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
bd675 bd675a bd677 bd677a bd679 bd679a bd681 http://onsemi.com 3 figure 3. darlington circuit schematic base npn bd675, 675a bd677, 677a bd679, 679a bd681 collector emitter 8.0 k 120
bd675 bd675a bd677 bd677a bd679 bd679a bd681 http://onsemi.com 4 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bd675/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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